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1N4448W 数据表(PDF) 2 Page - Diotec Semiconductor |
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1N4448W 数据表(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page 1N4148W, 1N4448W Characteristics Kennwerte 1N4148W 1N4448W Forward voltage Durchlass-Spannung Tj = 25°C IF = 1 mA 5 mA 10 mA 50 mA 150 mA VF < 0.715 V – < 0.855 V < 1 V < 1.25 V – 0.62...0.72 V < 0.855 V < 1 V < 1.25 V Leakage current Sperrstrom Tj = 25°C VR = 20 V 75 V IR < 25 nA < 1 µA < 25 nA < 100 nA Leakage current Sperrstrom Tj = 150°C VR = 20 V 75 V IR < 30 µA < 50 µA < 30 µA < 50 µA Junction capacitance – Sperrschichtkapazität VR = 0 V, f = 1 MHz CT typ. 2 pF Reverse recovery time – Sperrverzug trr < 4 ns 1) Thermal resistance junction to ambient Wärmewiderstand Sperrschicht – Umgebung RthA < 312 K/W 2) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG Forward characteristics (typical values) Durchlasskennlinien (typische Werte) V F [V] 1.4 1.0 0.8 0.6 0.4 0 [A] I F 10-4 10-3 10-2 10 -1 1 T = 25°C j T = 125°C j [%] P tot 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Power dissipation versus ambient temperature ) 2 Verlustleistung in Abh. von d. Umgebungstemp. ) 2 |
类似零件编号 - 1N4448W |
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类似说明 - 1N4448W |
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