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STB190NF04 数据表(PDF) 3 Page - STMicroelectronics |
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STB190NF04 数据表(HTML) 3 Page - STMicroelectronics |
3 / 9 page 3/9 STB190NF04/-1 STP190NF04 SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 20 V ID = 95 A RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 45 380 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=20V ID=190 A VGS=10V 130 40 45 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 20 V ID = 95 A RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 100 75 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 120 480 A A VSD (*) Forward On Voltage ISD = 120 A VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 190 A di/dt = 100A/µs VDD = 34 V Tj = 150°C (see test circuit, Figure 5) 90 295 6.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) |
类似零件编号 - STB190NF04 |
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类似说明 - STB190NF04 |
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