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MT3S35T Datasheet(数据表) 2 Page - Toshiba Semiconductor

部件型号  MT3S35T
说明  CMOS ST-BUS Family Multiple Rate Digital Switch
下载  4 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

MT3S35T Datasheet(HTML) 2 Page - Toshiba Semiconductor

  MT3S35T 数据表 HTML 1Page - Toshiba Semiconductor MT3S35T 数据表 HTML 2Page - Toshiba Semiconductor MT3S35T 数据表 HTML 3Page - Toshiba Semiconductor MT3S35T 数据表 HTML 4Page - Toshiba Semiconductor  
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MT3S35T
2
2002-08-19
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
VCE=3V, IC=10mA, f=2GHz
16
20
-
GHz
|S21e|
2(1)
VCE=3V, IC=10mA, f=1GHz
16
18
-
dB
Insertion Gain
|S21e|
2(2)
VCE=3V, IC=10mA, f=2GHz
11
13
-
dB
NF(1)
VCE=3V, IC=2mA, f=1GHz
-
1.1
-
dB
Noise Figure
NF(2)
VCE=3V, IC=2mA, f=2GHz
-
1.4
1.9
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
ICBO
VCB=8V, IE=0
-
-
1
µA
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
-
-
1
µA
DC Current Gain
hFE
VCE=3V, IC=10mA
70
-
140
-
Output Capacitance
Cob
VCB=1V, IE=0, f=1MHz
-
0.46
0.75
pF
Reverse Transistor Capacitance
Cre
VCB=1V, IE=0, f=1MHz (Note 1)
-
0.21
0.4
pF
Note 1:
Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.




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