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STP10N03 数据表(PDF) 1 Page - SamHop Microelectronics Corp. |
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STP10N03 数据表(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page S mHop Microelectronics C orp. a Symbol VDS VGS IDM 0.55 62.5 W A PD °C 227 -55 to 150 ID Units Parameter 100 120 480 °C/W V V ±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 100V 120A 4.0 @ VGS=10V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package. STP S ER IE S TO-220 S D G S G D N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous b TC=25°C -Pulsed b A Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA www.samhop.com.tw Aug,22,2016 1 Details are subject to change without notice. A 76 TC=100°C TC=100°C 91 W STP10N03 Ver 1.0 Green Product EAS Single Pulse Avalanche Energy c mJ 300 |
类似零件编号 - STP10N03 |
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类似说明 - STP10N03 |
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