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EC732315 数据表(PDF) 2 Page - E-CMOS Corporation |
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EC732315 数据表(HTML) 2 Page - E-CMOS Corporation |
2 / 4 page EC732315 P-Channel MOS E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 4 4H15N-Rev.F002 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Source-Drain Ratings and Characteristics Notes: 1. The maximum current rating is limited by bond-wires. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage -20 — — V VGS = 0V, ID = -250μA RDS(on) Static Drain-to-Source on-resistance — 114 158 mΩ VGS=-4.5V,ID = -3A — 158 202 VGS=-2.5V,ID = -2A VGS(th) Gate threshold voltage -0.5 — -1.0 V VDS = VGS, ID = -250μA IDSS Drain-to-Source leakage current — — -1 μA VDS = -20V,VGS = 0V IGSS Gate-to-Source forward leakage — — 100 nA VGS =12V — — -100 VGS = -12V Qg Total gate charge — 8.5 — nC ID = -3A, VDS= -10V, VGS = -4.5V Qgs Gate-to-Source charge — 1.2 — Qgd Gate-to-Drain("Miller") charge — 2.1 — td(on) Turn-on delay time — 7.2 — ns VGS=-4.5V, VDS=-10V, ID=-3A ,RGEN=3Ω tr Rise time — 36 — td(off) Turn-Off delay time — 53 — tf Fall time — 56 — Ciss Input capacitance — 560 — pF VGS = 0V VDS = -10V ƒ = 1MHz Coss Output capacitance — 80 — Crss Reverse transfer capacitance — 70 — Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — -3 A MOSFET symbol Showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — -15 A VSD Diode Forward Voltage — — -1.2 V IS=-1A, VGS=0V trr Reverse Recovery Time — 37 — ns TJ = 25°C, IF =-4A, di/dt = 100A/μs Qrr Reverse Recovery Charge — 27 — nC |
类似零件编号 - EC732315 |
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类似说明 - EC732315 |
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