EC732315 datasheet(2/4 Pages) E-CMOS

部件名	EC732315

功能描述	P-Channel MOS

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制造商	E-CMOS [E-CMOS Corporation]

网页	http://www.ecmos.com.tw/

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2 / 4 page

EC732315

P-Channel MOS

E-CMOS Corp. (www.ecmos.com.tw)

Page 2 of 4

4H15N-Rev.F002

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Source-Drain Ratings and Characteristics

Notes:

1.

The maximum current rating is limited by bond-wires.

2.

Repetitive rating; pulse width limited by max. junction temperature.

3.

The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment

with TA =25°C

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-20

—

V

VGS = 0V, ID = -250μA

RDS(on)

Static Drain-to-Source on-resistance

—

114

158

mΩ

VGS=-4.5V,ID = -3A

—

158

202

VGS=-2.5V,ID = -2A

VGS(th)

Gate threshold voltage

-0.5

—

-1.0

V

VDS = VGS, ID = -250μA

IDSS

Drain-to-Source leakage current

—

-1

μA

VDS = -20V,VGS = 0V

IGSS

Gate-to-Source forward leakage

—

100

nA

VGS =12V

—

-100

VGS = -12V

Qg

Total gate charge

—

8.5

—

nC

ID = -3A,

VDS= -10V,

VGS = -4.5V

Qgs

Gate-to-Source charge

—

1.2

—

Qgd

Gate-to-Drain("Miller") charge

—

2.1

—

td(on)

Turn-on delay time

—

7.2

—

ns

VGS=-4.5V, VDS=-10V,

ID=-3A ,RGEN=3Ω

tr

Rise time

—

36

—

td(off)

Turn-Off delay time

—

53

—

tf

Fall time

—

56

—

Ciss

Input capacitance

—

560

—

pF

VGS = 0V

VDS = -10V

ƒ = 1MHz

Coss

Output capacitance

—

80

—

Crss

Reverse transfer capacitance

—

70

—

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

IS

Continuous Source Current

(Body Diode)

—

-3

A

MOSFET symbol

Showing the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

-15

A

VSD

Diode Forward Voltage

—

-1.2

V

IS=-1A, VGS=0V

trr

Reverse Recovery Time

—

37

—

ns

TJ = 25°C, IF =-4A,

di/dt =

100A/μs

Qrr

Reverse Recovery Charge

—

27

—

nC

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