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SI4483EDY 数据表(PDF) 1 Page - Vishay Siliconix |
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SI4483EDY 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 5 page FEATURES D TrenchFETr Power MOSFET D ESD Protection: 3000 V APPLICATIONS D Notebook PC − Load Switch − Adapter Switch Si4483EDY Vishay Siliconix Document Number: 72862 S-42139—Rev. B, 15-Nov-04 www.vishay.com 1 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) −30 0.0085 @ VGS = −10 V −14 −30 0.014 @ VGS = −4.5 V −11 SD S D SD G D SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4483EDY-T1—E3 P-Channel 7100 W D S G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −30 V Gate-Source Voltage VGS "25 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID −14 −10 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID −11 −8 A Pulsed Drain Current IDM −50 A Continuous Source Current (Diode Conduction)a IS −2.7 −1.36 Maximum Power Dissipationa TA = 25_C PD 3.0 1.5 W Maximum Power Dissipationa TA = 70_C PD 1.9 0.95 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 33 42 Maximum Junction-to-Ambienta Steady State RthJA 70 85 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 16 21 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
类似零件编号 - SI4483EDY |
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