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RN4904 Datasheet(数据表) 2 Page - Toshiba Semiconductor

部件型号  RN4904
说明  Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
下载  5 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
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RN4904 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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RN4904
2001-06-07
2
Q1, Q2 Common Maximum Ratings (Ta = 25
°°°°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
PC *
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C
*
Total rating
Marking
Equivalent Circuit (Top View)
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = −50V, IE = 0
−100
Collector cut-off current
ICEO
VCE = −50V, IB = 0
−500
nA
Emitter cut-off current
IEBO
VEB = −10V, IC = 0
−0.082
−0.15
mA
DC current gain
hFE
VCE = −5V, IC = −10mA
80
Collector-emitter saturation voltage
VCE (sat)
IC = −5mA, IB = −0.25mA
−0.1
−0.3
V
Input voltage (ON)
VI (ON)
VCE = −0.2V, IC = −5mA
−1.5
−5.0
V
Input voltage (OFF)
VI (OFF)
VCE = −5V, IC = −0.1mA
−1.0
−1.5
V
Transition frequency
fT
VCE = −10V, IC = −5mA
200
MHz
Collector output capacitance
Cob
VCB = −10V, IE = 0, f = 1MHz
3
6
pF




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