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SI4565DY 数据表(PDF) 4 Page - Vishay Siliconix |
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SI4565DY 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 8 page Si4565DY Vishay Siliconix New Product www.vishay.com 4 Document Number: 73224 S-50033—Rev. A, 17-Jan-05 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL 0.01 0 1 80 100 40 60 10 0.1 Single Pulse Power, Junction-to-Ambient Time (sec) 20 0.001 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.04 0.08 0.12 0.16 0.20 0 2468 10 TJ = 150_C TJ = 25_C ID = 5.2 A 20 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) −0.6 −0.4 −0.2 −0.0 0.2 0.4 −50 −25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ − Temperature (_C) Safe Operating Area, Junction-to-Foot 100 1 0.1 1 10 100 0.01 10 100 ms 0.1 *Limited by rDS(on) TC = 25_C Single Pulse 1 s 10 s dc 10 ms VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified TA = 125_C TA = 25_C 1 ms |
类似零件编号 - SI4565DY |
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类似说明 - SI4565DY |
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