数据搜索系统,热门电子元器件搜索 |
|
RGS00TS65D 数据表(PDF) 2 Page - Rohm |
|
RGS00TS65D 数据表(HTML) 2 Page - Rohm |
2 / 13 page www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Data Sheet RGS00TS65D lThermal Resistance lIGBT Electrical Characteristics (at T j = 25°C unless otherwise specified) VCE = 650V, VGE = 0V Parameter Symbol Values Unit Min. Typ. Max. °C/W °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.17 Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.46 - - Unit Min. Typ. Max. μA mA Parameter Symbol Conditions Values V Collector Cut - off Current ICES Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - Tj = 25°C Tj = 175°C 10 5 - - Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 2.5mA 5.0 6.0 Collector - Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V nA 7.0 V V Tj = 25°C - 1.65 2.10 Tj = 175°C - 2.15 - ±200 2/11 2016.07 - Rev.A |
类似零件编号 - RGS00TS65D |
|
类似说明 - RGS00TS65D |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |