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AM6N25-1100D 数据表(PDF) 1 Page - Analog Power |
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AM6N25-1100D 数据表(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM6N25-1100D N-Channel 250-V (D-S) MOSFET VDS (V) ID (A) 250 5.6 Symbol Limit Units VDS 250 VGS ±20 Continuous Drain Current a TC=25°C ID 5.6 IDM 20 IS 6 A Power Dissipation a TC=25°C PD 50 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 40 RθJC 3 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Gate-Source Voltage PRODUCT SUMMARY rDS(on) (mΩ) 1100 @ VGS = 10V A Maximum Junction-to-Ambient a Maximum Junction-to-Case Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM6N25-1100D_1A |
类似零件编号 - AM6N25-1100D |
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类似说明 - AM6N25-1100D |
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