2SC2389S datasheet(1/3 Pages) JIANGSU

部件名	2SC2389S

功能描述	TO-92S Plastic-Encapsulate Transistors

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制造商	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

网页	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92S Plastic-Encapsulate Transistors

2SC2839S TRANSISTOR (NPN)

FEATURES

High fT and small Cre

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol Para

meter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current –Continuous

30

mA

PC

Collector Power Dissipation

400

mW

TJ

Junction Temperature

125

℃

Tstg

Storage Temperature

-55-1

50

℃

ELECTRICAL CHARA CTERISTICS (Ta=25

℃ unless other wise s pecified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100μA, IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB=10V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=4V, IC=0

0.1

μA

DC current gain

hFE

VCE=6V, IC=1mA

60

320

Transition frequency

fT

VCE=6V, IC=1mA

200

320

MHz

Reverse Transfer Capacitance

Cre

VCB=6V, f=1MHz

0.7

0.95

1.3

pF

Base-to-Collector Time Constant

rbb’cC

VCE=6V, Ic=1mA,,f=31.9MHZ

12

20

ps

Noise figure

NF

VCE=6V, Ic=1mA,,f=100MHZ

3.0

dB

Power Gain

PG

VCE=6V, Ic=1mA,,f=100MHZ

25

dB

CLASSIFIC ATION OF h FE

Rank D

E

F

Range

60-120

100-200

160-320

TO-92S

1. EMITTER

2. COLLECTOR

3. BASE

JC T

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

D,Jul,2016

1

3

2

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