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STC6301D 数据表(PDF) 2 Page - Stanson Technology |
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STC6301D 数据表(HTML) 2 Page - Stanson Technology |
2 / 8 page STC6301D N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6301D 2017. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical N P Unit Drain-Source Voltage VDSS 60 -60 V Gate-Source Voltage VGSS ± 20 ± 20 V Continuous Drain Current TA=25℃ TA=70℃ ID 23.0 15.0 -18.0 -11.0 A Pulsed Drain Current IDM 46 -36 A Continuous Source Current (Diode Conduction) IS 59 -50 A Power Dissipation TA=25℃ PD 34.7 34.7 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 85 85 ℃ /W |
类似零件编号 - STC6301D |
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类似说明 - STC6301D |
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