SI4922DY datasheet(2/3 Pages) VISHAY

部件名	SI4922DY

功能描述	SPICE Device Model Si4922DY

Download	3 Pages

Scroll/Zoom	100%

制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

标志

2 / 3 page

SPICE Device Model Si4922DY

Vishay Siliconix

www.vishay.com

Document Number: 71563

2

16-Apr-01

SPECIFICATIONS (TJ = 25

°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Typical

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250

µA

1.1

V

On-State Drain Current

a

ID(on)

VDS

≥ 5 V, VGS = 10 V

365

A

VGS = 10 V, ID = 8.8 A

0.013

VGS = 4.5 V, ID = 8.3 A

0.015

Drain-Source On-State Resistance

a

rDS(on)

VGS = 2.5 V, ID = 7.2 A

0.024

Ω

Forward Transconductance

a

gfs

VDS = 15 V, ID = 8.8 A

31

S

Diode Forward Voltage

a

VSD

IS = 1.7 A, VGS = 0 V

0.72

V

Dynamic

b

Total Gate Charge

Qg

22.8

Gate-Source Charge

Qgs

5.8

Gate-Drain Charge

Qgd

VDS = 15 V, VGS = 4.5 V, ID = 8.8 A

5.8

nC

Turn-On Delay Time

td(on)

13

Rise Time

tr

17

Turn-Off Delay Time

td(off)

20

Fall Time

tf

VDD = 15 V, RL = 15

Ω

ID

≅ 1 A, VGEN = 10 V, RG = 6 Ω

47

Source-Drain Reverse Recovery Time

trr

IF = 1.7 A, di/dt = 100 A/

µs

30

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

类似零件编号 - SI4922DY

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	SI4922DY-T1-E3	1Mb / 9P	Dual N-Channel 30 V (D-S) MOSFET

More results

类似说明 - SI4922DY

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI9936BDY	179Kb / 3P	SPICE Device Model Si9936BDY 02-Jun-04
	SI6801DQ	302Kb / 4P	SPICE Device Model Si6801DQ 22-May-04
	SI7446DP	186Kb / 3P	SPICE Device Model Si7446DP 24-May-04
	SUD15N15-95	180Kb / 3P	SPICE Device Model SUD15N15-95 05-Jun-04
	SUM50N03	184Kb / 3P	SPICE Device Model SUM50N03-13LC 09-Jun-04
Voltage Multipliers Inc...	Z50FF5	39Kb / 1P	Spice Model
	Z100UF	28Kb / 1P	Spice Model
	M160FF3	125Kb / 1P	Spice Model
	M160SG	124Kb / 1P	Spice Model
	M160UFG	125Kb / 1P	Spice Model