MJE350 datasheet(2/6 Pages) FOSHAN

部件名	MJE350

功能描述	Silicon PNP transistor in a TO-126F Plastic Package.

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制造商	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

网页	http://www.fsbrec.com/

标志

2 / 6 page

MJE350

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-300

V

Collector to Emitter Voltage

VCEO

-300

V

Emitter to Base Voltage

VEBO

-5

V

Collector Current - Continuous

IC

-500

mA

Collector Power Dissipation

PC

1

W

Collector Power Dissipation

PC(Tc=25 )

℃

20

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=-0.1mA

IB=0

-300

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=-1mA

IB=0

-300

V

Emitter to Base Breakdown Voltage

VEBO

IC=-0.1mA

IB=0

-5

V

Collector Cut-Off Current

ICBO

VCB=-300V

IE=0

-100

μA

Emitter Cut-Off Current

IEBO

VEB=-3V

IC=0

-100

μA

DC Current Gain

hFE

VCE=-10V

IC=-50mA

30

240

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

类似零件编号 - MJE350

制造商	部件名	数据表	功能描述
Motorola, Inc	MJE350	124Kb / 4P	0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS
STMicroelectronics	MJE350	66Kb / 5P	COMPLEMETARY SILICON POWER TRANSISTORS
Fairchild Semiconductor	MJE350	36Kb / 4P	High Voltage General Purpose Applications
STMicroelectronics	MJE350	502Kb / 5P	COMPLEMETARY SILICON POWER TRANSISTORS April 2003
TRANSYS Electronics Lim...	MJE350	73Kb / 2P	PNP EPITAXIAL SILICON POWER TRANSISTOR

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