数据搜索系统,热门电子元器件搜索 |
|
FMDS55N02 数据表(PDF) 2 Page - First Components International |
|
FMDS55N02 数据表(HTML) 2 Page - First Components International |
2 / 2 page ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 25 - - V Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 30A 7.5 9.0 Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 30A 4.5 6.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 1 1.6 3 V Zero Gate Voltage Drain Current IDSS VDS = 25V, VGS = 0V 1 uA Gate Body Leakage IGSS VGS = +20V, VDS = 0V + 100 nA Gate Resistance Rg Forward Transconductance gfs VDS = 15V, ID = 15A S Dynamic Total Gate Charge Qg 26 Gate-Source Charge Qgs 6 Gate-Drain Charge Qgd 5 Turn-On Delay Time td(on) 17 Turn-On Rise Time tr 3.5 Turn-Off Delay Time td(off) 40 Turn-Off Fall Time tf 6 Input Capacitance Ciss 2134 Output Capacitance Coss 343 Reverse Transfer Capacitance Crss 134 Source-Drain Diode Max. Diode Forward Current IS 20 A Diode Forward Voltage VSD IS = 20A, VGS = 0V 0.85 1.3 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% VDS = 15V, VGS = 0V f = 1.0 MHz pF m Ω VDD = 15V, RL = 15Ω Ι D = 1Α, VGEN = 10V RG = 6Ω ns VDS = 15V, ID = 25A VGS = 10V FMD S55N25 25V N-Channel Enhancement-Mode |
类似零件编号 - FMDS55N02 |
|
类似说明 - FMDS55N02 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |