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GS74116AGP-12 数据表(PDF) 3 Page - GSI Technology

部件名 GS74116AGP-12
功能描述  256K x 16 4Mb Asynchronous SRAM
Download  14 Pages
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制造商  GSI [GSI Technology]
网页  http://www.gsitechnology.com
标志 GSI - GSI Technology

GS74116AGP-12 数据表(HTML) 3 Page - GSI Technology

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Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
Input Voltage
VIN
–0.5 to VDD +0.5
(
≤ 4.6 V max.)
V
Output Voltage
VOUT
–0.5 to VDD +0.5
(
≤ 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
–55 to 150
oC
GS74116AGP/X
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.10 1/2013
3/13
© 2001, GSI Technology
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -8/-10/-12
VDD
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
VDD +0.3
V
Input Low Voltage
VIL
–0.3
0.8
V
Ambient Temperature,
Commercial Range
TAc
0
70
oC
Ambient Temperature,
Industrial Range
TAI
–40
85
oC
Notes:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
CIN
V = 0 V
5
pF
Output Capacitance
COUT
V
= 0 V
7
pF
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
IN
OUT


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