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1N400xGPHM3 数据表(PDF) 1 Page - Vishay Siliconix |
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1N400xGPHM3 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 5 page 1N400xGP-M3, 1N400xGPHM3 www.vishay.com Vishay General Semiconductor Revision: 04-Dec-13 1 Document Number: 87902 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Glass Passivated Junction Plastic Rectifier TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for both consumer, and automotive applications. FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-204AL (DO-41), molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end Note • For part numbers with “E” suffix, they are”-M3” commercial grade only Notes (1) JEDEC® registered values (2) For device using on bridge rectifier application PRIMARY CHARACTERISTICS Package DO-204AL (DO-41) IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM (8.3 ms sine-wave) 30 A IFSM (square wave tp = 1 ms) 45 A IR 5.0 μA VF 1.1 V TJ max. 175 °C Diode variations Single die DO-204AL (DO-41) SUPERECTIFIER ® MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS (1) 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC (1) 50 100 200 400 600 800 1000 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 75 °C IF(AV) (1) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM (1) 30 A Non-repetitive peak forward surge current square waveform TA = 25 °C (fig. 3) tp = 1 ms IFSM (1) 45 A tp = 2 ms 35 tp = 5 ms 30 Maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length TA = 75 °C IR(AV) (1) 30 μA Rating for fusing (t < 8.3 ms) I2t (2) 3.7 A2s Operating junction and storage temperature range TJ, TSTG (1) - 65 to + 175 °C |
类似零件编号 - 1N400xGPHM3 |
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类似说明 - 1N400xGPHM3 |
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