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BU25H06-E3 数据表(PDF) 2 Page - Vishay Siliconix |
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BU25H06-E3 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 5 page BU25H06-E3, BU25H08-E3 www.vishay.com Vishay General Semiconductor Revision: 08-Apr-16 2 Document Number: 87650 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Maximum instantaneous forward voltage per diode (1) IF = 12.5 A TA = 25 °C VF 0.97 1.05 V TA = 125 °C 0.87 0.95 Maximum reverse current per diode rated VR TA = 25 °C IR -5.0 μA TA = 125 °C 120 350 Typical junction capacitance per diode 4.0 V, 1 MHz CJ 125 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BU25H06 BU25H08 UNIT Typical thermal resistance RJC (1) 2.5 °C/W RJA (2) 24 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BU25H06-E3/P 4.84 P 20 Tube BU25H06-E3/A 4.84 A 250 Paper tray |
类似零件编号 - BU25H06-E3 |
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类似说明 - BU25H06-E3 |
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