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SM8LZ47 数据表(PDF) 2 Page - Toshiba Semiconductor |
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SM8LZ47 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page SM8LZ47 2001-07-13 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current IDRM VDRM = 800V ― ― 20 µA I T2 (+), Gate (+) ― ― 1.5 II T2 (+), Gate (−) ― ― 1.5 Gate Trigger Voltage III VGT VD = 12V RL = 20Ω T2 (−), Gate (−) ― ― 1.5 V I T2 (+), Gate (+) ― ― 30 II T2 (+), Gate (−) ― ― 30 Gate Trigger Current III IGT VD = 12V RL = 20Ω T2 (−), Gate (−) ― ― 30 mA Peak On−State Voltage VTM ITM = 12A ― ― 1.5 V Gate Non−Trigger Voltage VGD VD = 800V, Tc = 125°C 0.2 ― ― V Holding Current IH VD = 12V, ITM = 1A ― ― 50 mA Thermal Resistance Rth (j−c) Junction to Case, AC ― ― 3.6 °C / W Critical Rate of Rise of Off- State Voltage dv / dt VDRM = 800V, Tj = 125°C Exponential Rise ― 300 ― V / µs Critical Rate of Rise of Off- State Voltage at Commutation (dv / dt) c VDRM = 400V, Tj = 125°C (di / dt) c = −4.5A / ms 10 ― ― V / µs MARKING NUMBER SYMBOL MARK * 1 TOSHIBA PRODUCT MARK * 2 TYPE SM8LZ47 M8LZ47 * 3 Example 8A : January 1998 8B : Febrary 1998 8L : December 1998 |
类似零件编号 - SM8LZ47 |
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类似说明 - SM8LZ47 |
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