SM8LZ47

2001-07-13

1

TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

SM8LZ47

AC POWER CONTROL APPLICATIONS

l Repetitive Peak Off−State Voltage

l R.M.S ON−State Current

l High Commutating (dv / dt)

: (dv / dt) c = 10V / µs (Min.)

l Isolation Voltage

MAXIMUM RATINGS

CHARACTERISTIC

SYMBOL

RATING

UNIT

Repetitive PeakOff−State Voltage

800

V

R.M.S On−State Current

(Full Sine Waveform)

8

A

70 (50Hz)

Peak One Cycle Surge On-State

Current (Non−Repetitive)

80 (60Hz)

A

I

2

t Limit Value

I

2

t

24.5

A

2

s

Critical Rate of Rise of On−State

Current

(Note 1)

di / dt

50

A / µs

Peak Gate Power Dissipation

5

W

Average Gate Power Dissipation

0.5

W

Peak Gate Voltage

10

V

Peak Gate Current

2

A

Junction Temperature

−40~125

°C

Storage Temperature Range

−40~125

°C

Isolation Voltage (AC, t = 1min.)

1500

V

Note:

di / dt test condition

JEDEC

―

JEITA

―

TOSHIBA

13−10H1A

Weight: 1.7g

Unit: mm