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SS12F 数据表(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SS12F 数据表(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
1 / 3 page Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 1.0 A PINNING PIN 1 2 DESCRIPTION Cathode Anode Simplified outline SMAF and symbol Top View Marking Code: SS12 — SS120 Maximum DC Blocking Voltage Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum Average Forward Rectified Current Typical Junction Capacitance 20 40 V 14 28 V V 1.0 30 0.3 10 95 -55 ~ +150 A A V mA pF °C Typical Thermal Resistance °C/W Units Absolute Maximum Ratings and Electrical characteristics Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % 25 °C 20 40 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forward Voltage at 1 A Maximum DC Reverse Current at Rated DC Reverse Voltage Operating Junction Temperature Range SS12F SS14F SS16F SS18F SS110F SS112F SS115F SS120F T = 25 °C a T =100 °C a VRRM VRMS VDC IF(AV) IFSM VF IR RθJA Cj Tj Symbols Tstg Storage Temperature Range 60 42 60 80 56 80 100 70 100 0.55 0.70 0.85 110 -55 ~ +150 °C 120 84 120 150 105 150 200 140 200 0.90 0.2 5 0.1 2 80 40 FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A 27mg 0 00095oz pprox. Weight: / . Page 1 of 3 1 2 SS12F THRU SS120F (2) (1) Measured at 1 MHz and applied reverse voltage of 4 V D.C (2) (1) P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0 |
类似零件编号 - SS12F |
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类似说明 - SS12F |
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