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ES1GF 数据表(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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ES1GF 数据表(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
1 / 3 page Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current – 1 A PINNING PIN 1 2 DESCRIPTION Cathode Anode Top View Marking Code: ES1AF~ES1JF: ES1A~ES1J Simplified outline SMAF and symbol MECHANICAL DATA • • Terminals: Solderable per MIL-STD-750, Method 2026 • pprox. Weight: 27mg / 0.00095oz Case: SMAF A Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load Maximum Forward Voltage at 1 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at T = 125 °C c Typical Junction Capacitance at V =4V, f=1MHz R VRRM VRMS VDC IF(AV) IFSM VF IR Cj T , T j stg 50 100 150 200 300 400 600 V 35 70 105 140 210 280 420 V V 1 30 1 5 100 15 35 -55 ~ +150 A A V μA ns °C Symbols Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C Absolute Maximum Ratings and Characteristics Maximum Reverse Recovery Time trr pF ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF Units 50 100 150 200 300 400 600 1.25 1.68 FEATURES For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives • Page 1 of 3 1 2 Typical Thermal Resistance RθJA 80 °C/W ES1AF THRU ES1JF (1) (2) Maximum DC Reverse Current T = 25 °C a at Rated DC Blocking Voltage T =125 °C a . (2) (1)Measured with I = 0.5 A, I = 1 A, I = 0.25 A F R rr P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0 |
类似零件编号 - ES1GF |
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类似说明 - ES1GF |
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