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TS884IQ4T 数据表(PDF) 9 Page - STMicroelectronics |
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TS884IQ4T 数据表(HTML) 9 Page - STMicroelectronics |
9 / 26 page DocID024119 Rev 3 9/26 TS882, TS884 Electrical characteristics 26 TF Fall time (90% to 10%) CL = 30 pF, RL = 1 MΩ 150 ns TON Power-up time 1.1 1.7 ms 1. All values over the temperature range are guaranteed through correlation and simulation. No production test is performed at the temperature range limits. 2. The offset is defined as the average value of positive and negative trip points (input voltage differences requested to change the output state in each direction). 3. The hysteresis is a built-in feature of the TS882 device. It is defined as the voltage difference between the trip points. 4. Maximum values include unavoidable inaccuracies of the industrial tests. Table 6. VCC = +5 V, Tamb = +25 °C, VICM = VCC/2 (unless otherwise specified) (1) (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
类似零件编号 - TS884IQ4T |
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类似说明 - TS884IQ4T |
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