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MV1863D Datasheet(数据表) 1 Page - Advanced Semiconductor

部件型号  MV1863D
说明  SILICON ABRUPT TUNING VARACTOR DIODE
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制造商  ASI [Advanced Semiconductor]
网页  http://www.advancedsemiconductor.com
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MV1863D Datasheet(HTML) 1 Page - Advanced Semiconductor

   
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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
VB
IR = 10
µA60
V
IR
VR = 55 V
100
µµµµA
CT
VR = 4.0 V
f = 1.0 MHz
4.23
4.70
5.17
pF
TR
C = -4/C = -60
f = 1.0 MHz
2.6
3.3
RATIO
RS
VR = 4.0 V
f = 500 MHz
1.1
Ohms
Q
VR = 4.0 V
f = 100 MHz
300
---
Cp
f = 1.0 MHz
0.18
pF
Ls
0.8
µµµµH
SILICON ABRUPT TUNING VARACTOR DIODE
MV1863D
DESCRIPTION:
The
ASI MV1863D is a Passivated
Epitaxial Silicon Abrupt Tuning
Varactor Diode.
MAXIMUM RATINGS
I
100 mA
V
60 V
PDISS
500 mW @ TC = 25
OC
TJ
-65
OC to +175 OC
TSTG
-65
OC to +200 OC
θθθθ
JC
0.3
OC/W
PACKAGE STYLE 31




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