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STG4260BJR 数据表(PDF) 6 Page - STMicroelectronics

部件名 STG4260BJR
功能描述  Low voltage 0.5dual SPDT switch with break-before-make feature and 15 kV ESD protection
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STG4260BJR 数据表(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STG4260
6/19
Doc ID 15168 Rev 2
4
Electrical characteristics
Table 6.
DC specifications
Symbol
Parameter
VCC
(V)
VL
(V)
Test
condition
Value
Unit
TA = 25 °C
-40 to 85 °C
Min
Typ
Max
Min
Max
VIH
High level
input voltage
1.65 – 4.3
1.65 – 1.95
1.25
1.25
V
2.3 – 2.7
1.75
1.75
3.0 – 3.6
2.34
2.34
4.3
2.80
2.80
VIL
Low level
input voltage
1.65 – 4.3
1.65 – 1.95
0.6
0.6
V
2.3 – 2.7
0.8
0.8
3.0 – 3.6
1.05
1.05
4.3
1.5
1.5
RON
ON resistance
1.8
1.65 – 4.3
VS =0V to
VCC
IS =100 mA
1.5
2.5
3.7
Ω
2.25
0.75
1.0
1.3
3
0.50
0.65
0.8
3.7
0.45
0.55
0.7
4.3
0.40
0.50
0.65
ΔRON
ON resistance
match
between
channels (1)
1.8
1.65 – 4.3
VS =0V to
VCC
IS =100 mA
–40
m
Ω
2.25
20
3–
10
3.7
10
4.3
10
RFLAT
ON resistance
flatness(2)
1.8
1.65 – 4.3
VS =0V to
VCC
IS =100 mA
1000
1700
2000
m
Ω
2.25
300
430
550
3
170
220
270
3.7
160
210
270
4.3
160
210
270
IOFF
Sn OFF state
leakage
current
4.3
4.3
VS = 0.3 to 4.0
VD = 0.3 to 4.0
-30
30
-300
300
nA
ION
Sn ON state
leakage
current
4.3
4.3
VS = 0.3 to 4.0
VD = open
-30
30
-300
300
nA
ID
D ON state
leakage
current
4.3
4.3
VS = open
VD = 0.3 to 4.0
-30
30
-300
300
nA


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