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CD2315 Datasheet(数据表) 1 Page - Advanced Semiconductor

部件型号  CD2315
说明  NPN SILICON RF POWER TRANSISTOR
下载  1 Pages
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制造商  ASI [Advanced Semiconductor]
网页  http://www.advancedsemiconductor.com
标志 

   
 1 page
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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 50 mA
35
V
BVCER
IC = 50 mA
RBE = 10
60
V
BVEBO
IE = 10 mA
4.0
V
ICES
VE = 28 V
5
mA
hFE
VCE = 5.0 V
IC = 1.0 A
10
100
---
Cob
VCB = 28 V
f = 1.0 MHz
80
pF
GPE
IMD3
VCE = 25 V
ICQ = 3.2 A
f = 225 MHz
PREF = 16 W
Vision = -8 dB
Snd. = -7 dB
Side Band = -16 dB
13.5
14.5
-55
dB
dBc
NPN SILICON RF POWER TRANSISTOR
CD2315
DESCRIPTION:
The
ASI CD2315 is designed for
broadband amplifier applications in
commercial and amateur
communication equipment.
FEATURES:
• P
G = 18 dB min. at 75 W/30 MHz
• IMD
3 = -30 dBc max. at 75 W (PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
10 A
VCB
60 V
VCE
35 V
PDISS
140 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θθθθ
JC
1.05 °C/W
PACKAGE STYLE .380 4L FLG
1 = Collector
2 = Emitter
3 = Base
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
2
2
1
3




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