2SJ610

2002-09-11

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)

2SJ610

Switching Regulator, DC-DC Converter and

Motor Drive Applications

==== 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

-250

V

-250

V

Gate-source voltage

±20

V

DC

(Note 1)

-2.0

Drain current

Pulse (t

= 1 ms)

(Note 1)

-4.0

A

Drain power dissipation

20

W

Single pulse avalanche energy

(Note 2)

180

mJ

Avalanche current

-2.0

A

Repetitive avalanche energy (Note 3)

2.0

mJ

Channel temperature

150

°C

Storage temperature range

-55~150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

6.25

°C/W

Thermal resistance, channel to ambient

125

°C/W

Note 1: Please use devices on condition that the channel temperature

is below 150°C.

Note 3: Repetitive rating: Pulse width limited by maximum channel

temperature

This transistor is an electrostatic sensitive device. Please handle with

caution.

Unit: mm

JEDEC

―

JEITA

SC-64

TOSHIBA

2-7B1B

Weight: 0.36 g (typ.)

JEDEC

―

JEITA

―

TOSHIBA

2-7J1B

Weight: 0.36 g (typ.)