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2SJ610 数据表(PDF) 1 Page - Toshiba Semiconductor |
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2SJ610 数据表(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SJ610 2002-09-11 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications · Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) · High forward transfer admittance: |Yfs| = 18 S (typ.) · Low leakage current: IDSS = −100 µA (VDS = −250 V) · Enhancement-mode: Vth = −1.5~−3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Tc ==== 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -250 V Drain-gate voltage (RGS = 20 kW) VDGR -250 V Gate-source voltage VGSS ±20 V DC (Note 1) ID -2.0 Drain current Pulse (t = 1 ms) (Note 1) IDP -4.0 A Drain power dissipation PD 20 W Single pulse avalanche energy (Note 2) EAS 180 mJ Avalanche current IAR -2.0 A Repetitive avalanche energy (Note 3) EAR 2.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = -50 V, Tch = 25°C (initial), L = 75 mH, IAR = -2.0 A, RG = 25 W Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) |
类似零件编号 - 2SJ610 |
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类似说明 - 2SJ610 |
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