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MMF60R360PTH 数据表(PDF) 3 Page - MagnaChip Semiconductor.

部件名 MMF60R360PTH
功能描述  600V 0.36(ohm) N-channel MOSFET
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制造商  MGCHIP [MagnaChip Semiconductor.]
网页  http://www.magnachip.co.kr
标志 MGCHIP - MagnaChip Semiconductor.

MMF60R360PTH 数据表(HTML) 3 Page - MagnaChip Semiconductor.

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MMF60R360P Datasheet
Nov. 2014 Revision 1.2
MagnaChip Semiconductor Ltd.
3
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Drain
– Source
Breakdown voltage
V(BR)DSS
600
-
-
V
VGS = 0V,
ID=0.25mA
Gate Threshold Voltage
VGS(th)
2
3
4
V
VDS = VGS, ID=0.25mA
Zero Gate Voltage
Drain Current
IDSS
-
-
1
μA
VDS = 600V,
VGS = 0V
Gate Leakage Current
IGSS
-
-
100
nA
VGS = ±30V,
VDS =0V
Drain-Source On
State Resistance
RDS(ON)
-
0.32
0.36
VGS = 10V, ID = 3.8 A
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Input Capacitance
Ciss
-
890
-
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
-
670
-
Reverse Transfer Capacitance
Crss
-
40
-
Effective Output Capacitance
Energy Related
(4)
Co(er)
-
26
-
VDS = 0V to 480V,
VGS = 0V,f = 1.0MHz
Turn On Delay Time
td(on)
-
18
-
ns
VGS = 10V, RG = 25Ω,
VDS = 300V, ID = 11A
Rise Time
tr
-
40
-
Turn Off Delay Time
td(off)
-
80
-
Fall Time
tf
-
30
-
Total Gate Charge
Qg
-
28
-
nC
VGS = 10V, VDS = 480V,
ID = 11A
Gate
– Source Charge
Qgs
-
7
-
Gate
– Drain Charge
Qgd
-
10
-
Gate Resistance
RG
-
3.5
-
VGS = 0V, f = 1.0MHz
4) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS
 Static Characteristics (T
c=25℃ unless otherwise specified)
 Dynamic Characteristics (T
c=25℃ unless otherwise specified)


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