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MMF60R190QTH 数据表(PDF) 2 Page - MagnaChip Semiconductor.

部件名 MMF60R190QTH
功能描述  600V 0.19(ohm) N-channel MOSFET
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制造商  MGCHIP [MagnaChip Semiconductor.]
网页  http://www.magnachip.co.kr
标志 MGCHIP - MagnaChip Semiconductor.

MMF60R190QTH 数据表(HTML) 2 Page - MagnaChip Semiconductor.

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MMF60R190Q Datasheet
Apr. 2016 Revision 1.0
MagnaChip Semiconductor Ltd.
2
Parameter
Symbol
Rating
Unit
Note
Drain
– Source voltage
VDSS
600
V
Gate
– Source voltage
VGSS
±30
V
Continuous drain current
(1)
ID
20
A
TC = 25℃
13
A
TC = 100℃
Pulsed drain current
(2)
IDM
60
A
Power dissipation
PD
33
W
Single - pulse avalanche energy
EAS
420
mJ
MOSFET dv/dt ruggedness
dv/dt
50
V/ns
Diode dv/dt ruggedness
(3)
dv/dt
15
V/ns
Storage temperature
Tstg
-55 ~150
Maximum operating junction
temperature
Tj
150
1)
Id limited by maximum junction temperature
2)
Pulse width tP limited by Tj,max
3)
ISD ≤ ID, VDS peak ≤ V(BR)DSS
Parameter
Symbol
Value
Unit
Thermal resistance, junction-case max
Rthjc
3.75
℃/W
Thermal resistance, junction-ambient max
Rthja
75
℃/W
 Thermal Characteristics
 Absolute Maximum Rating (T
c=25℃ unless otherwise specified)


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