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MMF60R115PTH 数据表(PDF) 4 Page - MagnaChip Semiconductor. |
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MMF60R115PTH 数据表(HTML) 4 Page - MagnaChip Semiconductor. |
4 / 10 page MMF60R115P Datasheet Aug. 2014 Revision 1.0 MagnaChip Semiconductor Ltd. 4 Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous Diode Forward Current ISD - - 33 A Diode Forward Voltage VSD - - 1.4 V ISD = 33.0A, VGS = 0 V Reverse Recovery Time trr - 488 - ns ISD = 33.0A di/dt = 100 A/μs VDD = 100 V Reverse Recovery Charge Qrr - 9.4 - μC Reverse Recovery Current Irrm - 38.6 - A Reverse Diode Characteristics (T c=25℃ unless otherwise specified) |
类似零件编号 - MMF60R115PTH |
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类似说明 - MMF60R115PTH |
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