数据搜索系统,热门电子元器件搜索
  Chinese  ▼

Delete All
ON OFF
ALLDATASHEETCN.COM

X  

预览 PDF Download HTML

MMF60R115P 数据表(PDF) 3 Page - MagnaChip Semiconductor.

部件名 MMF60R115P
功能描述  600V 0.115(ohm) N-channel MOSFET
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MGCHIP [MagnaChip Semiconductor.]
网页  http://www.magnachip.co.kr
标志 MGCHIP - MagnaChip Semiconductor.

MMF60R115P 数据表(HTML) 3 Page - MagnaChip Semiconductor.

  MMF60R115P Datasheet HTML 1Page - MagnaChip Semiconductor. MMF60R115P Datasheet HTML 2Page - MagnaChip Semiconductor. MMF60R115P Datasheet HTML 3Page - MagnaChip Semiconductor. MMF60R115P Datasheet HTML 4Page - MagnaChip Semiconductor. MMF60R115P Datasheet HTML 5Page - MagnaChip Semiconductor. MMF60R115P Datasheet HTML 6Page - MagnaChip Semiconductor. MMF60R115P Datasheet HTML 7Page - MagnaChip Semiconductor. MMF60R115P Datasheet HTML 8Page - MagnaChip Semiconductor. MMF60R115P Datasheet HTML 9Page - MagnaChip Semiconductor. Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 10 page
background image
MMF60R115P Datasheet
Aug. 2014 Revision 1.0
MagnaChip Semiconductor Ltd.
3
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Drain
– Source
Breakdown voltage
V(BR)DSS
600
-
-
V
VGS = 0V,
ID=0.25mA
Gate Threshold Voltage
VGS(th)
2
3
4
V
VDS = VGS, ID=0.25mA
Zero Gate Voltage
Drain Current
IDSS
-
-
1
μA
VDS = 600V,
VGS = 0V
Gate Leakage Current
IGSS
-
-
100
nA
VGS = ±30V,
VDS =0V
Drain-Source On
State Resistance
RDS(ON)
-
0.104
0.115
VGS = 10V, ID = 14.5A
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Input Capacitance
Ciss
-
2760
-
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
-
1780
-
Reverse Transfer Capacitance
Crss
-
91
-
Effective Output Capacitance
Energy Related
(3)
Co(er)
-
73.3
-
VDS = 0V to 480V,
VGS = 0V,f = 1.0MHz
Turn On Delay Time
td(on)
-
50
-
ns
VGS = 10V, RG = 25Ω,
VDS = 300V, ID = 33 A
Rise Time
tr
-
105
-
Turn Off Delay Time
td(off)
-
240
-
Fall Time
tf
-
82
-
Total Gate Charge
Qg
-
79
-
nC
VGS = 10V, VDS = 480V,
ID = 33 A
Gate
– Source Charge
Qgs
-
18
-
Gate
– Drain Charge
Qgd
-
34
-
Gate Resistance
RG
-
2.0
-
VGS = 0V, f = 1.0MHz
3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS
 Static Characteristics (T
c=25℃ unless otherwise specified)
 Dynamic Characteristics (T
c=25℃ unless otherwise specified)


Html Pages

1  2  3  4  5  6  7  8  9  10 


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn