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MDP1921 数据表(PDF) 2 Page - MagnaChip Semiconductor. |
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MDP1921 数据表(HTML) 2 Page - MagnaChip Semiconductor. |
2 / 6 page Jun. 2013. Version 1.2 MagnaChip Semiconductor Ltd. 2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDP1921TH -55~150 oC TO-220 Tube Halogen Free Electrical Characteristics (TJ =25 oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 100 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 2.9 4.0 Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1.0 μA Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 50A - 3.8 4.5 m Ω Forward Transconductance gfs VDS = 10V, ID = 50A - 120 - S Dynamic Characteristics Total Gate Charge Qg VDS = 50V, ID = 50A, VGS = 10V - 100 - nC Gate-Source Charge Qgs - 27 - Gate-Drain Charge Qgd - 26 - Input Capacitance Ciss VDS = 40V, VGS = 0V, f = 1.0MHz - 6750 - pF Reverse Transfer Capacitance Crss - 50 - Output Capacitance Coss - 1300 - Turn-On Delay Time td(on) VGS = 10V, VDS = 50V, ID = 50A , RG = 3.0Ω - 30.4 - ns Rise Time tr - 28.8 - Turn-Off Delay Time td(off) - 93.0 - Fall Time tf - 34.2 - Gate Resistance Rg f=1 MHz - 2.5 - Ω Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.9 1.2 V Body Diode Reverse Recovery Time trr IF = 50A, dl/dt = 100A/μs - 73 ns Body Diode Reverse Recovery Charge Qrr - 150 nC Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited 2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 28.0A, VGS = 10V. |
类似零件编号 - MDP1921 |
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类似说明 - MDP1921 |
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