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FXT605 Datasheet(数据表) 1 Page - Zetex Semiconductors

部件型号  FXT605
说明  NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
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制造商  ZETEX [Zetex Semiconductors]
网页  http://www.diodes.com/
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FXT605 Datasheet(HTML) 1 Page - Zetex Semiconductors

   
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NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 – SEPT 93
FEATURES
* 120 Volt VCEO
* Gain of 2K at IC=1 Amp
*Ptot= 1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
* Replacement of TO126 and TO220 packages
REFER TO ZTX605 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
140
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4A
Continuous Collector Current
IC
1A
Power Dissipation at Tamb = 25°C
Ptot
1W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
140
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
120
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
V
IE=100µA, IC=0
Collector Cut-Off
Current
ICBO
0.01
10
µ
A
µ
A
VCB=120V, IE=0
VCB=120V,Tamb=100°C
Emitter Cut-Off Current IEBO
0.1
µ
A
VEB=8V, IC=0
Colllector-Emitter
Cut-Off Current
ICES
10
µ
A
VCES=120V
Collector-Emitter
Saturation Voltage
VCE(sat)
1.0
1.5
V
V
IC=0.25A, IB=0.25mA*
IC=1A, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.8
V
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.7
V
IC=1A, VCE=5V*
Static Forward Current
Transfer Ratio
hFE
2000
5000
2000
500
100K
IC=50mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
Transition
Frequency
fT
150
MHz
IC=100mA, VCE=10V
f=20MHz
* Measured under pulse conditions. Pulse width=300µs. Duty cycle ≤2%
E-Line
TO92 Compatible
FXT605
3-44
B
C
E




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