REV. 0

–2–

Parameter

Min

Typ

Max

Unit

Test Conditions

2

20

W

Ω, PV

20

W

Ω, PV

EFFICIENCY

87

%

Ω

Per High-Side Transistor

260

320

m

Ω

@ 1 A

Per Low-Side Transistor

190

235

m

Ω

@ 1 A

Temperature Coefficient

0.7

m

Ω/°C

THERMAL WARNING ACTIVE

135

°CDie temperature

THERMAL SHUTDOWN ACTIVE

150

°CDie temperature

OVERCURRENT SHUTDOWN ACTIVE

3.8

5

6.75

A

POWER SUPPLIES

4.5

5.0

5.5

V

4.5

5.0

5.5

V

6.5

8 to 20

22.5

V

Power-Down Current

614

µA

RST/PDN held low

113

µA

RST/PDN held low

17

µA

RST/PDN held low

Operating Current

1.8

2.75

mA

4

5.2

mA

40

mA

50:50 384 kHz square wave on

INA and INC

DIGITAL I/O

Input Voltage High

2.0

V

Input Voltage Low

1.2

V

Output Voltage High

V

@ 2 mA

Output Voltage Low

0.4

V

@ 2 mA

Leakage Current on Digital Inputs

10

µA

NOTES

Specifications subject to change without notice.

DIGITAL TIMING CHARACTERISTICS

Symbol

Parameter

Min

Typ

Max

Unit

Input transition to output initial response

30

ns

Power transistor switching time

3.5

ns

Nonoverlap time

25 to 40

ns

RST/PDN minimum low pulsewidth

20

ns

Mode pin setup time before

RST/PDN going high

5

ns

Mode pin hold time after

RST/PDN going high

5

ns

MUTE asserted to output initial response

3

s

Specifications subject to change without notice.

10%,

Edge Speed = Slowest, Nonoverlap Time = Shortest.)

Load Impedance = 8

, unless otherwise noted.)