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STPSC20H065C 数据表(PDF) 1 Page - STMicroelectronics |
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STPSC20H065C 数据表(HTML) 1 Page - STMicroelectronics |
1 / 9 page This is information on a product in full production. November 2013 DocID023605 Rev 3 1/9 STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Features No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. K (2) A1 (1) A2 (3) A1 K A2 A1 K A2 TO-220AB STPSC20H065CT TO-247 STPSC20H065CW Table 1. Device summary Symbol Value IF(AV) 2 x 10 A VRRM 650 V Tj (max) 175 °C www.st.com |
类似零件编号 - STPSC20H065C |
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类似说明 - STPSC20H065C |
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