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TLP525G-2 数据表(PDF) 3 Page - Toshiba Semiconductor |
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TLP525G-2 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TLP525G,TLP525G−2,TLP525G−4 2002-09-25 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 µA Capacitance CT V = 0, f = 1MHz ― 30 ― pF Peak off -state current IDRM VDRM = 400V ― 10 100 nA Peak on -state voltage VTM ITM = 100mA ― 1.7 3.0 V Holding current IH ¾ ― 0.2 ― mA Critical rate of rise of off -state voltage dv / dt Vin = 120Vrms, Ta = 85°C (Figure 1) 200 500 ― V / µs Critical rate of rise of commutating voltage dv / dt (c) Vin = 30Vrms, IT = 15mA (Figure 1) ― 0.2 ― V / µs Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Trigger LED current IFT VT = 3V ― 5 10 mA Capacitance input to output CS VS = 0, f = 1MHz ― 0.8 ― pF Isolation resistance RS VS = 500V, R.H. ≤ 60% 5 ´10 10 10 14 ― Ω AC, 1 minute 2500 ― ― AC, 1 second, in oil ― 5000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 5000 ― Vdc Fig.1 dv / dt Test Circuit |
类似零件编号 - TLP525G-2 |
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类似说明 - TLP525G-2 |
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