STP315N10F7 datasheet(4/13 Pages) STMICROELECTRONICS

部件名	STP315N10F7

功能描述	High avalanche ruggedness

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STP315N10F7

4/13

DocID025348 Rev 4

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID

= 250 μA

100

V

IDSS

Zero gate voltage drain current

VGS= 0 V, VDS= 100 V

1

µA

VGS= 0 V, VDS= 100 V,

TC= 125 °C (1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = 20 V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID

= 250 μA

2.5

3.5

4.5

V

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 60 A

2.3

2.7

mΩ

Notes:

(1)Defined by design, not subject to production test.

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0 V, VDS= 25 V, f = 1 MHz

-

12800

-

pF

Coss

Output capacitance

-

3500

-

pF

Crss

Reverse transfer

capacitance

-

170

-

pF

Qg

Total gate charge

VDD = 50 V, ID = 180 A,

VGS = 10 V

(see Figure 14: "Test circuit for

gate charge behavior")

-

180

-

nC

Qgs

Gate-source charge

-

78

-

nC

Qgd

Gate-drain charge

-

34

-

nC

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on

delay time

VDD = 50V, ID = 90 A,

RG

= 4.7 Ω, VGS = 10 V

(see Figure 13: "Test circuit for resistive

load switching times" and Figure 18:

"Switching time waveform")

-

62

-

ns

tr

Rise time

-

108

-

ns

td(off)

Turn-off

delay time

-

148

-

ns

tf

Fall time

-

40

-

ns

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