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STP170N8F7 数据表(PDF) 5 Page - STMicroelectronics |
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STP170N8F7 数据表(HTML) 5 Page - STMicroelectronics |
5 / 12 page DocID024550 Rev 3 5/12 STP170N8F7 Electrical characteristics Table 8. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 120 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 480 A VSD (2) 2. Pulsed: pulse duration=300 µs, duty cycle 1.5%. Forward on voltage VGS=0, ISD = 120 A - 1.2 V trr Reverse recovery time ISD = 120 A, di/dt = 100 A/µs, VDD= 64 V, Tj=150 °C -54 ns Qrr Reverse recovery charge - 78 nC IRRM Reverse recovery current - 2.9 A |
类似零件编号 - STP170N8F7 |
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类似说明 - STP170N8F7 |
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