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STP80N6F6 数据表(PDF) 1 Page - STMicroelectronics |
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STP80N6F6 数据表(HTML) 1 Page - STMicroelectronics |
1 / 12 page This is information on a product in full production. January 2014 DocID023470 Rev 2 1/12 STP80N6F6 Automotive-grade N-channel 60 V, 4.4 m Ω typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • Low gate charge • Very low on-resistance • High avalanche ruggedness Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the 6 th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. TO-220 1 2 3 TAB Order code VDS RDS(on) max. ID STP80N6F6 60 V 5 m Ω 80 A (1) 1. Current limited by package Table 1. Device summary Order code Marking Packages Packaging STP80N6F6 80N6F6 TO-220 Tube www.st.com |
类似零件编号 - STP80N6F6 |
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类似说明 - STP80N6F6 |
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