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STGIPQ5C60T-HL 数据表(PDF) 10 Page - STMicroelectronics |
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STGIPQ5C60T-HL 数据表(HTML) 10 Page - STMicroelectronics |
10 / 26 page Electrical characteristics STGIPQ5C60T-HL, STGIPQ5C60T-HZ 10/26 DocID026844 Rev 7 Table 13: Sense comparator characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Iib Input bias current VCIN = 1 V - 3 µA Vod Open-drain low level output voltage Iod = 3 mA - 0.5 V RON_OD Open-drain low level output Iod = 3 mA - 166 Ω RPD_SD SD pull-down resistor (1) - 125 kΩ td_comp Comparator delay T/ SD /OD pulled to 5 V through 100 kΩ resistor - 90 130 ns SR Slew rate CL = 180 pF; Rpu = 5 kΩ - 60 V/µs tsd Shutdown to high / low-side driver propagation delay VOUT = 0, Vboot = VCC, VIN = 0 to 3.3 V - 125 ns tisd Comparator triggering to high / low-side driver turn-off propagation delay Measured applying a voltage step from 0 V to 3.3 V to pin CIN - 200 Notes: (1)Equivalent values as a result of the resistances of three drivers in parallel. Table 14: Truth table Conditions Logic input (VI) Output T/ SD /OD LIN HIN LVG HVG Shutdown enable half-bridge tri-state L X(1) X(1) L L Interlocking half-bridge tri-state H H H L L 0 “logic state” half-bridge tri-state H L L L L 1 “logic state” low-side direct driving H H L H L 1 “logic state” high-side direct driving H L H L H Notes: (1)X: don’t care. |
类似零件编号 - STGIPQ5C60T-HL |
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类似说明 - STGIPQ5C60T-HL |
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