STGW80H65DFB datasheet(5/18 Pages) STMICROELECTRONICS

部件名	STGW80H65DFB

功能描述	High speed switching series

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STGW80H65DFB, STGWT80H65DFB

Electrical characteristics

DocID024366 Rev 8

5/18

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCE = 400 V, IC = 80 A,

VGE = 15 V, RG = 10

Ω

(see Figure 28: " Test circuit

for inductive load switching" )

-

84

-

ns

tr

Current rise time

-

52

-

ns

(di/dt)on

Turn-on current slope

-

1270

-

A/µs

td(off)

Turn-off-delay time

-

280

-

ns

tf

Current fall time

-

31

-

ns

Eon(1)

Turn-on switching energy

-

2.1

-

mJ

Eoff(2)

Turn-off switching energy

-

1.5

-

mJ

Ets

Total switching energy

-

3.6

-

mJ

td(on)

Turn-on delay time

VCE = 400 V, IC = 80 A,

VGE = 15 V, RG = 10

Ω ,

TJ = 175 °C

(see Figure 28: " Test

circuit for inductive load

switching")

-

77

-

ns

tr

Current rise time

-

51

-

ns

(di/dt)on

Turn-on current slope

-

1270

-

A/µs

td(off)

Turn-off-delay time

-

328

-

ns

tf

Current fall time

-

30

-

ns

Eon(1)

Turn-on switching energy

-

4.4

-

mJ

Eoff(2)

Turn-off switching energy

-

2.1

-

mJ

Ets

Total switching energy

-

6.5

-

mJ

Notes:

(1)Including the reverse recovery of the diode.

(2)Including the tail of the collector current.

Table 7: Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 80 A, VR = 400 V,

di/dt = 1000 A/µs

VGE = 15 V,

(see Figure 28: " Test circuit

for inductive load switching")

-

85

-

ns

Qrr

Reverse recovery charge

-

1105

-

nC

Irrm

Reverse recovery current

-

26

-

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

722

-

A/µs

Err

Reverse recovery energy

-

267

-

µJ

trr

Reverse recovery time

IF = 80 A, VR = 400 V,

VGE = 15 V ,TJ = 175 °C

di/dt = 1000 A/µs

(see Figure 28: " Test circuit

for inductive load switching")

-

149

-

ns

Qrr

Reverse recovery charge

-

4920

-

nC

Irrm

Reverse recovery current

-

66

-

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

546

-

A/µs

Err

Reverse recovery energy

-

1172

-

µJ

类似零件编号 - STGW80H65DFB

制造商	部件名	数据表	功能描述
STMicroelectronics	STGW80H65DFB	1Mb / 22P	Trench gate field-stop IGBT, HB series 650 V, 80 A high speed May 2015 Rev 6
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