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STGW60H65FB 数据表(PDF) 1 Page - STMicroelectronics |
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STGW60H65FB 数据表(HTML) 1 Page - STMicroelectronics |
1 / 16 page This is information on a product in full production. April 2015 DocID025187 Rev 4 1/16 16 STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Figure 1. Internal schematic diagram Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • High frequency converters Description These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. C (2, TAB) E (3) G (1) TO-247 1 2 3 TO-3P 1 2 3 TAB Table 1. Device summary Order code Marking Package Packing STGW60H65FB GW60H65FB TO-247 Tube STGWT60H65FB GWT60H65FB TO-3P Tube www.st.com |
类似零件编号 - STGW60H65FB |
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类似说明 - STGW60H65FB |
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