STGW40H120DF2 datasheet(3/17 Pages) STMICROELECTRONICS

部件名	STGW40H120DF2

功能描述	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 17 page

STGW40H120DF2, STGWA40H120DF2

Electrical ratings

DocID023753 Rev 5

3/17

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

1200

V

IC

Continuous collector current at TC = 25 °C

80

A

IC

Continuous collector current at TC = 100 °C

40

A

ICP(1)

Pulsed collector current

160

A

VGE

Gate-emitter voltage

±20

V

VGE

Transient gate-emitter voltage (tp

≤ 10 μs, D ≤ 0.01)

±30

V

IF

Continuous forward current at TC = 25 °C

80

A

IF

Continuous forward current at TC = 100 °C

40

A

IFP(1)

Pulsed forward current

160

A

PTOT

Total dissipation at TC = 25 °C

468

W

TSTG

Storage temperature range

-55 to 150

°C

TJ

Operating junction temperature range

-55 to 175

°C

Notes:

(1)Pulse width limited by maximum junction temperature.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.32

°C/W

RthJC

Thermal resistance junction-case diode

1.3

°C/W

RthJA

Thermal resistance junction-ambient

50

°C/W

类似零件编号 - STGW40H120DF2

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Inchange Semiconductor ...	STGW40H120DF2	358Kb / 3P	Trench gate Field-Stop IGBT 2023-10-16

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类似说明 - STGW40H120DF2

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