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STGW15M120DF3 数据表(PDF) 4 Page - STMicroelectronics |
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STGW15M120DF3 数据表(HTML) 4 Page - STMicroelectronics |
4 / 19 page Electrical characteristics STGW15M120DF3, STGWA15M120DF3 4/19 DocID026222 Rev 2 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 2 mA 1200 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 15 A 1.85 2.3 V VGE = 15 V, IC = 15 A, TJ = 125 °C 2.1 VGE = 15 V, IC = 15 A TJ = 175 °C 2.2 VF Forward on-voltage IF = 15 A 2.7 3.8 V IF = 15 A TJ = 125 °C 2.05 V IF = 15 A TJ = 175 °C 1.75 V VGE(th) Gate threshold voltage VCE = VGE, IC = 500 µA 5 6 7 V ICES Collector cut-off current (VGE = 0) VCE = 1200 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 -985 - pF Coes Output capacitance - 118 - pF Cres Reverse transfer capacitance -38 - pF Qg Total gate charge VCC = 960 V, IC =15 A, VGE = 15 V, see Figure 30 -53 - nC Qge Gate-emitter charge - 8 - nC Qgc Gate-collector charge - 32 - nC |
类似零件编号 - STGW15M120DF3 |
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类似说明 - STGW15M120DF3 |
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