数据搜索系统,热门电子元器件搜索 |
|
STGW15H120DF2 数据表(PDF) 1 Page - STMicroelectronics |
|
STGW15H120DF2 数据表(HTML) 1 Page - STMicroelectronics |
1 / 18 page This is information on a product in full production. March 2015 DocID023751 Rev 5 1/18 STGW15H120DF2, STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Figure 1. Internal schematic diagram Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 15 A • 5 µs minimum short circuit withstand time at TJ=150 °C • Safe paralleling • Very fast recovery antiparallel diode • Low thermal resistance Applications • Uninterruptible power supply • Welding machines • Photovoltaic inverters • Power factor correction • High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW15H120DF2 G15H120DF2 TO-247 Tube STGWA15H120DF2 G15H120DF2 TO-247 long leads Tube www.st.com |
类似零件编号 - STGW15H120DF2 |
|
类似说明 - STGW15H120DF2 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |