数据搜索系统,热门电子元器件搜索 |
|
STGW30V60F 数据表(PDF) 5 Page - STMicroelectronics |
|
STGW30V60F 数据表(HTML) 5 Page - STMicroelectronics |
5 / 19 page DocID025005 Rev 4 5/19 STGFW30V60F, STGW30V60F, STGWT30V60F Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, see Figure 25 -45 - ns tr Current rise time - 16 - ns (di/dt)on Turn-on current slope - 1500 - A/µs td(off) Turn-off delay time - 189 - ns tf Current fall time - 19 - ns Eon (1) 1. Energy losses include reverse recovery of the external diode. The diode is the same of the copacked STGW30V60DF. Turn-on switching losses - 383 - µJ Eoff (2) 2. Turn-off losses include also the tail of the collector current. Turn-off switching losses - 233 - µJ Ets Total switching losses - 616 - µJ td(on) Turn-on delay time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 25 -42 - ns tr Current rise time - 17 - ns (di/dt)on Turn-on current slope - 1337 - A/µs td(off) Turn-off delay time - 193 - ns tf Current fall time - 32 - ns Eon (1) Turn-on switching losses - 794 - µJ Eoff (2) Turn-off switching losses - 378 - µJ Ets Total switching losses - 1172 - µJ |
类似零件编号 - STGW30V60F |
|
类似说明 - STGW30V60F |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |