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STGW30V60DF 数据表(PDF) 3 Page - STMicroelectronics |
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STGW30V60DF 数据表(HTML) 3 Page - STMicroelectronics |
3 / 22 page DocID024361 Rev 4 3/22 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Electrical characteristics 2 Electrical characteristics T J = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 mA 600 V V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 30 A 1.85 2.3 V V GE = 15 V, I C = 30 A T J = 125 °C 2.15 V GE = 15 V, I C = 30 A T J = 175 °C 2.35 V F Forward on-voltage I F = 30 A 2 2.6 V I F = 30 A, T J = 125 °C 1.7 V I F = 30 A, T J = 175 °C 1.6 V V GE(th) Gate threshold voltage V CE = V GE , I C = 1 mA 5 6 7 V I CES Collector cut-off current (V GE = 0) V CE = 600 V 25 μA I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance V CE = 25 V, f = 1 MHz, V GE = 0 -3750 - pF C oes Output capacitance - 120 - pF C res Reverse transfer capacitance -77 - pF Q g Total gate charge V CC = 480 V, I C = 30 A, V GE = 15 V, see Figure 29 -163 - nC Q ge Gate-emitter charge - 28 - nC Q gc Gate-collector charge - 72 - nC |
类似零件编号 - STGW30V60DF |
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类似说明 - STGW30V60DF |
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