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STGB30V60DF 数据表(PDF) 4 Page - STMicroelectronics

部件名 STGB30V60DF
功能描述  Low thermal resistance
Download  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGB30V60DF 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
4/22
DocID024361 Rev 4
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10
Ω, V
GE
= 15 V,
see
Figure 28
-45
-
ns
t
r
Current rise time
-
16
-
ns
(di/dt)
on
Turn-on current slope
-
1500
-
A/μs
t
d
(
off
)
Turn-off delay time
-
189
-
ns
t
f
Current fall time
-
19
-
ns
E
on
(1)
1.
Energy losses include reverse recovery of the diode.
Turn-on switching losses
-
383
-
μJ
E
off
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
233
-
μJ
E
ts
Total switching losses
-
616
-
μJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10
Ω, V
GE
= 15 V,
T
J
= 175 °C, see
Figure 28
-42
-
ns
t
r
Current rise time
-
17
-
ns
(di/dt)
on
Turn-on current slope
-
1337
-
A/μs
t
d
(
off
)
Turn-off delay time
-
193
-
ns
t
f
Current fall time
-
32
-
ns
E
on
(1)
Turn-on switching losses
-
794
-
μJ
E
off
(2)
Turn-off switching losses
-
378
-
μJ
E
ts
Total switching losses
-
1172
-
μJ
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery time
I
F
= 30 A, V
R
= 400 V,
di/dt=1000 A/μs
,
V
GE
= 15 V,
(see
Figure 28)
-53
-
ns
Q
rr
Reverse recovery charge
-
384
-
nC
I
rrm
Reverse recovery current
-
14.5
-
A
dI
rr/
/dt
Peak rate of fall of reverse
recovery current during t
b
-
788
-
A/μs
E
rr
Reverse recovery energy
-
104
-
μJ
t
rr
Reverse recovery time
I
F
= 30 A, V
R
= 400 V,
di/dt=1000 A/μs
,
V
GE
= 15 V,
T
J
= 175 °C, (see
Figure 28)
-
104
-
ns
Q
rr
Reverse recovery charge
-
1352
-
nC
I
rrm
Reverse recovery current
-
26
-
A
dI
rr/
/dt
Peak rate of fall of reverse
recovery current during t
b
-
310
-
A/μs
E
rr
Reverse recovery energy
-
407
-
μJ


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