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STGB30M65DF2 数据表(PDF) 5 Page - STMicroelectronics |
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STGB30M65DF2 数据表(HTML) 5 Page - STMicroelectronics |
5 / 18 page STGB30M65DF2 Electrical characteristics DocID027431 Rev 3 5/18 Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω (see Figure 29: " Test circuit for inductive load switching" ) 31.6 - ns tr Current rise time 13.4 - ns (di/dt)on Turn-on current slope 1791 - A/µs td(off) Turn-off-delay time 115 - ns tf Current fall time 110 - ns Eon(1) Turn-on switching energy 0.3 - mJ Eoff(2) Turn-off switching energy 0.96 - mJ Ets Total switching energy 1.26 - mJ td(on) Turn-on delay time VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) 30 - ns tr Current rise time 17 - ns (di/dt)on Turn-on current slope 1435 - A/µs td(off) Turn-off-delay time 116 - ns tf Current fall time 194 - ns Eon(1) Turn-on switching energy 0.67 - mJ Eoff(2) Turn-off switching energy 1.36 - mJ Ets Total switching energy 2.03 - mJ tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 - µs VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs (see Figure 29: " Test circuit for inductive load switching") - 140 - ns Qrr Reverse recovery charge - 880 - nC Irrm Reverse recovery current - 17 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 650 - A/µs Err Reverse recovery energy - 115 - µJ trr Reverse recovery time IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") - 244 - ns Qrr Reverse recovery charge - 2743 - nC Irrm Reverse recovery current - 25 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 220 - A/µs Err Reverse recovery energy - 320 - µJ |
类似零件编号 - STGB30M65DF2 |
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类似说明 - STGB30M65DF2 |
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