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STGB20V60F 数据表(PDF) 8 Page - STMicroelectronics

部件名 STGB20V60F
功能描述  600 V, 20 A very high speed trench gate field-stop IGBT
Download  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGB20V60F 数据表(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STGB20V60F, STGP20V60F
8/18
DocID024890 Rev 1
Figure 14. Switching losses vs. collector
current
Figure 15. Switching losses vs. gate resistance
Figure 16. Switching losses vs. junction
temperature
Figure 17. Switching losses vs. collector
emitter voltage
Figure 18. Switching times vs. collector current Figure 19. Switching times vs. gate resistance
AM17185v1
0
200
400
600
800
1000
010
20
30
40
E (μJ)
Ic (A)
E
ON
E
OFF
V
CC 400V, VGE= 15V,
Rg=10Ω, T
J = 175°C
AM17184v1
100
300
500
700
010
20
30
40
E (μJ)
RG (Ω)
E
ON
E
OFF
V
CC 400V, VGE= 15V,
I
C =20 A, TJ = 175°C
AM17186v1
100
150
200
250
300
350
400
450
0
25
50
75
100 125 150 175
E (μJ)
TJ (ºC)
E
ON
E
OFF
V
CC 400V, VGE= 15V,
I
C = 20 A, Rg= 10 Ω
AM17187v1
100
200
300
400
500
600
150
200
250
300
350
400
450
E (μJ)
Vce (V)
E
ON
E
OFF
V
GE= 15V, TJ = 175 °C
I
C = 20 A, Rg= 10 Ω
AM17188v1
1
10
100
010
20
30
40
ts (ns)
Ic (A)
V
CC = 400V, VGE = 15V,
Tj =175
°C, Rg = 10 Ω
t doff
t don
t r
t f
AM17189v1
t f
1
10
100
0
10203040
ts (ns)
Rg (Ω)
VCC= 400V, VGE= 15V,
Tj=175 °C Ic = 40 A
t doff
t don
t r


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